IXYS IXFK94N50P2 500V 94A N-Channel Power MOSFET – Full Product Description

The IXYS IXFK94N50P2 is a high-performance N-Channel Power MOSFET designed for demanding high-voltage and high-current switching applications. Manufactured by IXYS, this device belongs to the PolarP2™ HiPerFET™ power MOSFET family and is designed to provide high power density, low conduction losses, fast switching performance, and reliable operation in industrial power electronics. The IXFK94N50P2 combines a 500V drain-to-source voltage rating, 94A continuous drain current rating, and maximum 55mΩ drain-to-source on-resistance, making it suitable for a wide range of power conversion and switching circuits.

High-Voltage and High-Current Performance

The IXFK94N50P2 is rated for a maximum 500V drain-to-source voltage (VDSS). This high voltage rating makes the MOSFET suitable for circuits where high-voltage switching and power conversion are required. Its continuous drain current rating is 94A at a case temperature of 25°C, while the pulsed drain current rating can reach 240A under the specified conditions. These ratings make the device suitable for high-power switching applications when appropriate thermal management and circuit design are used.

The 94A current rating should not be interpreted as a universal operating current under every condition. Actual allowable current depends on case temperature, heatsink performance, switching frequency, power losses, PCB or busbar design, and the overall thermal design of the application.

Low RDS(on) for Reduced Conduction Loss

One of the important features of the IXFK94N50P2 is its low maximum RDS(on) of 55mΩ, specified at VGS = 10V under the manufacturer’s test conditions. Low on-resistance helps reduce conduction losses when the MOSFET is operating in the ON state.

Lower conduction resistance can be particularly useful in high-current power converters, motor-drive circuits, battery chargers, UPS systems, and other applications where minimizing power loss and heat generation is important. The device is designed to provide a combination of high current capability and low conduction resistance in a rugged through-hole power package.

N-Channel Enhancement-Mode MOSFET

The IXFK94N50P2 is an N-Channel Enhancement-Mode MOSFET. The gate terminal controls the conduction between the drain and source terminals. The device has a gate-source voltage rating of ±30V continuous, with a transient gate-source voltage rating of ±40V according to the datasheet’s specified conditions.

The maximum gate threshold voltage is specified at approximately 5V, with a minimum of 3V under the stated test conditions. However, threshold voltage should not be treated as the recommended operating gate-drive voltage. The RDS(on) specification is given at 10V gate drive, so a suitable gate-driver circuit should be used when low conduction loss is required.

Fast Intrinsic Diode and Avalanche Capability

The IXFK94N50P2 includes a fast intrinsic diode, which can be beneficial in switching applications where current commutation and freewheeling behavior are important. The MOSFET is also avalanche rated, providing additional ruggedness against specified transient conditions.

The datasheet specifies an avalanche energy rating of 3.5J under the stated test conditions. It also provides a dynamic dv/dt rating of 30V/ns, supporting the device’s use in high-speed switching applications.

High Power Dissipation

The IXFK94N50P2 has a maximum power dissipation rating of 1300W at a case temperature of 25°C. This high theoretical power-dissipation rating demonstrates the capability of the package and silicon when operated under the manufacturer’s specified thermal conditions.

In practical applications, a suitable heatsink and thermal interface are essential. The actual power that can safely be dissipated depends on junction temperature, case temperature, thermal resistance, mounting conditions, switching losses, and ambient temperature. Proper heatsink selection is therefore important when using the IXFK94N50P2 for high-current or high-frequency applications.

TO-264 Power Package

The IXFK94N50P2 is supplied in a rugged TO-264 / TO-264AA through-hole package. This package is designed for high-power semiconductor applications and provides a practical mounting solution for heatsinks.

The terminal configuration is:

• Gate (G)
• Drain (D)
• Source (S)
• Metal Tab = Drain

Because the metal tab is electrically connected to the drain, suitable electrical isolation should be considered when mounting the device to a heatsink shared with other electrically different components.

Switching Applications

The combination of high voltage capability, high current capability, low RDS(on), fast intrinsic diode, avalanche rating, and low package inductance makes the IXFK94N50P2 suitable for high-power switching applications.

Typical applications include:

• Switch-mode power supplies (SMPS)
• Resonant-mode power supplies
• DC-DC converters
• Battery chargers
• UPS systems
• AC motor drives
• DC motor drives
• High-speed power switching circuits
• Industrial power converters
• High-current switching stages
• Power management equipment

These applications are specifically identified by IXYS for the PolarP2 HiPerFET power MOSFET family.

Gate Charge and Switching Characteristics

The IXFK94N50P2 has a maximum gate charge of approximately 220nC at VGS = 10V, with some distributor specifications listing approximately 228nC. Its maximum input capacitance is approximately 13,700pF at VDS = 25V. These characteristics are important when selecting a gate driver and designing high-frequency switching circuits.

Because the device has a relatively substantial gate charge, the gate-driver circuit should be capable of supplying and removing the required gate current efficiently, particularly at higher switching frequencies. Good gate-drive design can help control switching losses and improve overall converter efficiency.

Temperature Range

The IXFK94N50P2 is specified for a junction operating temperature range of approximately -55°C to +150°C. The storage temperature range is also specified from -55°C to +150°C. This wide temperature range makes the device suitable for many industrial environments when operated within its electrical and thermal limits.

Technical Specifications

The above specifications are based primarily on the manufacturer datasheet and distributor technical listings.

Why Choose IXYS IXFK94N50P2?

The IXYS IXFK94N50P2 is a strong choice for engineers and technicians looking for a high-voltage, high-current power MOSFET for industrial and power-electronics applications. Its 500V voltage rating provides substantial voltage handling capability, while its 94A continuous current rating supports high-current applications under the specified thermal conditions.

Its 55mΩ maximum RDS(on) helps reduce conduction losses, while the fast intrinsic diode and avalanche-rated construction provide useful characteristics for switching applications. The TO-264 package also makes the device convenient for through-hole assembly and heatsink mounting.

Overall, the IXFK94N50P2 is well suited for applications where reliable high-power switching, high voltage capability, current-handling capacity, and thermal performance are important.

Important Installation Note

For high-power applications, the MOSFET should be used with an appropriately designed heatsink and gate-driver circuit. The 500V and 94A ratings are maximum specified ratings under particular test conditions, not necessarily recommended continuous operating conditions for every design. Engineers should check the complete datasheet, including SOA, thermal characteristics, switching parameters, gate-drive requirements, and application-specific losses before selecting operating conditions.

The IXFK94N50P2 is therefore best suited to professional and industrial power-electronics designs such as SMPS, DC-DC converters, battery chargers, UPS systems, motor drives, and high-speed switching equipment.